1A
Silicon (Si)
N-Type or P-Type Silicon Wafer – CZ Si / FZ Si
Applications: ICs & microchips, MEMS, sensors, power devices, R&D
Specifications Summary of Silicon Wafers
| Growth method | CZ (Czochralski), FZ (Float Zone) |
|---|---|
| Size (inch) | 2", 4", 6", 8" (option 12") |
| Grade | Prime – Test – Dummy |
| Orientation | ⟨100⟩ ; ⟨110⟩ ; ⟨111⟩ |
| Doped | N-type (Phosphorus, P) ; P-type (Boron, B) |
| Resistivity (Ω·cm) | 0.001–0.005 ; 0.01–0.02 ; 1–10 ; 1–100 |
| Polished | 1-side (SSP) ; 2-side (DSP) |
| Thickness (µm) | 275 ; 300 ; 365 ; 500 ; 525 ; 725 |
Best selling (10)
- Prime CZ-Si 2" P-type — Prime CZ-Si Wafer, Size: 2", Orientation: (100), P-type (Boron), Resistivity: 0.01–0.02 Ω·cm, 2-Side Polished, Thickness: 525 ± 25 µm — Quality: Prime; Material: CZ-Si; Size (inch): 2"; Orientation: (100); Doping: Boron (P-type); Resistivity: 0.01–0.02 Ω·cm (SKU: DG-SW-020001)
- Prime CZ-Si 2" N-type — Prime CZ-Si Wafer, Size: 2", Orientation: (100), N-type (Phosphorus), Resistivity: 0.01–0.02 Ω·cm, 2-Side Polished, Thickness: 525 ± 25 µm — Quality: Prime; Material: CZ-Si; Size (inch): 2"; Orientation: (100); Doping: Phosphorus (N-type); Resistivity: 0.01–0.02 Ω·cm (SKU: DG-SW-020002)
- Prime CZ-Si 4" N-type — Prime CZ-Si Wafer, Size: 4", Orientation: (100), N-type (Phosphorus), Resistivity: 1–10 Ω·cm, 2-Side Polished, Thickness: 525 ± 25 µm — Quality: Prime; Material: CZ-Si; Size (inch): 4"; Orientation: (100); Doping: Phosphorus (N-type); Resistivity: 1–10 Ω·cm (SKU: DG-SW-040001)
- Prime CZ-Si 4" P-type — Prime CZ-Si Wafer, Size: 4", Orientation: (100), P-type (Boron), Resistivity: 1–10 Ω·cm, 1-Side Polished, Thickness: 525 ± 25 µm — Quality: Prime; Material: CZ-Si; Size (inch): 4"; Orientation: (100); Doping: Boron (P-type); Resistivity: 1–10 Ω·cm (SKU: DG-SW-040002)
- Prime CZ-Si 6" P-type — Prime CZ-Si Wafer, Size: 6", Orientation: (100), P-type (Boron), Resistivity: 1–100 Ω·cm, 1-Side Polished, Thickness: 675 ± 25 µm — Quality: Prime; Material: CZ-Si; Size (inch): 6"; Orientation: (100); Doping: Boron (P-type); Resistivity: 1–100 Ω·cm (SKU: DG-SW-060001)
- Prime CZ-Si 6" N-type (111) — Prime CZ-Si Wafer, Size: 6", Orientation: (111), N-type (Phosphorus), Resistivity: 1–10 Ω·cm, 2-Side Polished, Thickness: 675 ± 25 µm — Quality: Prime; Material: CZ-Si; Size (inch): 6"; Orientation: (111); Doping: Phosphorus (N-type); Resistivity: 1–10 Ω·cm (SKU: DG-SW-060002)
- Prime CZ-Si 8" P-type — Prime CZ-Si Wafer, Size: 8", Orientation: (100), P-type (Boron), Resistivity: 1–10 Ω·cm, 2-Side Polished, Thickness: 725 ± 25 µm — Quality: Prime; Material: CZ-Si; Size (inch): 8"; Orientation: (100); Doping: Boron (P-type); Resistivity: 1–10 Ω·cm (SKU: DG-SW-080001)
- Prime CZ-Si 8" N-type — Prime CZ-Si Wafer, Size: 8", Orientation: (100), N-type (Phosphorus), Resistivity: 8–12 Ω·cm, 2-Side Polished, Thickness: 725 ± 25 µm — Quality: Prime; Material: CZ-Si; Size (inch): 8"; Orientation: (100); Doping: Phosphorus (N-type); Resistivity: 8–12 Ω·cm (SKU: DG-SW-080002)
- Low-resistivity CZ-Si 4" — Low-resistivity CZ-Si Wafer, Size: 4", Orientation: (100), N-type, Resistivity: 0.001–0.005 Ω·cm, 1-Side Polished, Thickness: 525 ± 25 µm — Quality: Prime; Material: CZ-Si; Size (inch): 4"; Orientation: (100); Doping: Phosphorus (N-type); Resistivity: 0.001–0.005 Ω·cm (SKU: DG-SW-040003)
- FZ-Si 4" (High purity) — FZ-Si Wafer (High purity), Size: 4", Orientation: (100), N-type, Resistivity: 1–100 Ω·cm, 2-Side Polished, Thickness: 500 ± 25 µm — Quality: Prime; Material: FZ-Si; Size (inch): 4"; Orientation: (100); Doping: Phosphorus (N-type); Resistivity: 1–100 Ω·cm (SKU: DG-SW-040FZ1)
1B
Silicon Carbide (SiC)
SiC Substrate – 4H / 6H Polytype
Specifications Summary of SiC Substrates
| Polytype | 4H-SiC ; 6H-SiC |
|---|---|
| Size (inch) | 2" ; 3" ; 4" ; 6" (option 8") |
| Type | N-type (Nitrogen) ; Semi-Insulating – HPSI ; P-type |
| Grade | Prime – Research/Dummy |
| Orientation | (0001) on-axis ; 4° off-axis |
| Thickness (µm) | 350 ; 500 |
| Applications | Power electronics, RF/MMIC, GaN-on-SiC, EV |
Best selling (4)
- SiC 3" HPSI Prime — SiC substrate 3 inch, 350 µm thickness, HPSI (Semi-Insulating) type, Prime Grade — Polytype: 4H-SiC; Type: Semi-Insulating (HPSI); Size: 3"; Thickness: 350 µm; Grade: Prime (SKU: DG-SiC-030001)
- SiC 3" N-type — SiC substrate, 4H-SiC, N-type (Nitrogen), Size: 3", Thickness: 350 µm, Prime Grade, 1-Side Polished — Polytype: 4H-SiC; Type: N-type (Nitrogen); Size: 3"; Thickness: 350 µm; Polished: Single Side (SKU: DG-SiC-030002)
- SiC 4" N-type — SiC substrate, 4H-SiC, N-type, Off-axis 4°, Size: 4", Thickness: 500 µm, Prime Grade, 2-Side Polished — Polytype: 4H-SiC; Type: N-type (Nitrogen); Orientation: Off-axis 4°; Size: 4"; Thickness: 500 µm; Polished: Double Side (SKU: DG-SiC-040001)
- SiC 6" N-type — SiC substrate, 4H-SiC, N-type, Size: 6", Thickness: 500 µm, Prime Grade — Polytype: 4H-SiC; Type: N-type (Nitrogen); Size: 6"; Thickness: 500 µm; Grade: Prime (SKU: DG-SiC-060001)
1C
Silicon-on-Insulator (SOI)
SOI Wafer – 3 layers (Device Si / BOX / Handle)
Specifications Summary of SOI Wafers
| Structure | Device layer (Si) / BOX (SiO₂) / Handle wafer (Si) |
|---|---|
| Size (inch) | 4" ; 6" ; 8" |
| Device layer (µm) | 0.05 – 10 |
| BOX layer (µm) | 0.1 – 3 |
| Technology | SmartCut / BSOI (Bonded) |
| Applications | RF-SOI, FD-SOI, MEMS, Photonics |
Best selling (3)
- SOI 6" – RF — Silicon-On-Insulator (SOI) wafer, three layers for Microelectronics & Radio Frequency. Size: 6", Device: 2 µm / BOX: 1 µm, (100), P-type — Size: 6"; Device layer: 2 µm; BOX layer: 1 µm; Orientation: (100); Type: P-type (SKU: DG-SOI-060001)
- SOI 8" – FD-SOI — SOI wafer 8-inch, FD-SOI grade, Device: 0.2 µm / BOX: 0.4 µm — Size: 8"; Device layer: 0.2 µm; BOX layer: 0.4 µm; Type: FD-SOI (SKU: DG-SOI-080001)
- SOI 6" – MEMS — SOI wafer 6", Device: 10 µm / BOX: 2 µm — for MEMS / Sensors — Size: 6"; Device layer: 10 µm; BOX layer: 2 µm; Application: MEMS / Sensors (SKU: DG-SOI-060002)
2A
Sapphire (Al₂O₃)
Specifications Summary of Sapphire
| Material | Single-crystal Al₂O₃, purity 99.999% |
|---|---|
| Orientation (plane) | C-plane (0001) ; A-plane ; R-plane ; M-plane |
| Size | 2" ; 4" ; 6" ; 8" (& 310×310 mm plate) |
| Thickness (µm) | 430 ; 650 ; 750 ; 1000 |
| Polished | SSP ; DSP (epi-ready) |
| Applications | LED, GaN epitaxy, optics, heat dissipation |
Best selling (3)
- Sapphire wafer Ø200mm — Single crystal Al₂O₃ 99.999%, Dia 200 mm sapphire wafer, 1000 µm / 750 µm thickness — Material: Al₂O₃ 99.999%; Diameter: 200 mm; Thickness: 750 / 1000 µm (SKU: DG-SAP-200001)
- Sapphire Heat Dissipation 310×310 — 310 × 310 mm Sapphire Heat Dissipation Substrate — Material: Al₂O₃; Size: 310 × 310 mm; Application: Heat dissipation (SKU: DG-SAP-310001)
- Sapphire 4" C-plane — Sapphire Wafer C-plane (0001), Size: 4", DSP, Thickness: 650 µm — for LED/GaN epi — Orientation: C-plane (0001); Size: 4"; Polished: DSP; Thickness: 650 µm (SKU: DG-SAP-040001)
2B
AlN (Aluminum Nitride)
Specifications Summary of AlN
| Type | Single-crystal AlN ; AlN ceramic substrate |
|---|---|
| Size | 2" (single crystal) ; ceramic plate on request |
| Features | High thermal conductivity, wide band gap (~6.2 eV) |
| Applications | UV-C LED, RF/SAW, power, heat dissipation |
Best selling (2)
- AlN Single Crystal 2" — AlN Single Crystal Substrate, Size: 2", C-plane, Epi-ready — for UV-C LED — Type: Single crystal; Size: 2"; Orientation: C-plane (SKU: DG-AlN-020001)
- AlN Ceramic Substrate — AlN Ceramic Substrate — heat dissipation & power device packaging — Type: Ceramic; Application: Heat sink / packaging (SKU: DG-AlN-CER001)
2C
GaAs (Gallium Arsenide)
Specifications Summary of GaAs
| Type | Semi-Insulating (SI) ; Semi-Conducting (N-type / P-type) |
|---|---|
| Orientation | (100) ; (111) |
| Size | 2" ; 3" ; 4" ; 6" |
| Doping | Undoped (SI) ; Si (N-type) ; Zn (P-type) |
| Applications | RF/MMIC, solar cells, LED, laser diode |
Best selling (3)
- GaAs 4" Semi-Insulating — GaAs Wafer, Semi-Insulating, Size: 4", Orientation (100), DSP — for RF devices — Type: Semi-Insulating (SI); Size: 4"; Orientation: (100); Polished: DSP (SKU: DG-GaAs-040001)
- GaAs 4" N-type — GaAs Wafer, N-type (Si-doped), Size: 4", (100) — for solar / LED — Type: N-type (Si); Size: 4"; Orientation: (100) (SKU: DG-GaAs-040002)
- GaAs 3" P-type — GaAs Wafer, P-type (Zn-doped), Size: 3", (100) — Type: P-type (Zn); Size: 3"; Orientation: (100) (SKU: DG-GaAs-030001)
2D
InP (Indium Phosphide)
Specifications Summary of InP
| Type | Semi-Insulating (Fe-doped) ; N-type (S-doped) ; P-type (Zn-doped) |
|---|---|
| Orientation | (100) |
| Size | 2" ; 3" ; 4" |
| Applications | Photonics, telecom lasers 1310/1550 nm, HBT/HEMT |
Best selling (3)
- InP 3" Semi-Insulating — InP Wafer, Semi-Insulating (Fe-doped), Size: 3", (100), epi-ready — for photonics — Type: Semi-Insulating (Fe); Size: 3"; Orientation: (100) (SKU: DG-InP-030001)
- InP 2" N-type — InP Wafer, N-type (S-doped), Size: 2", (100) — Type: N-type (S); Size: 2"; Orientation: (100) (SKU: DG-InP-020001)
- InP 2" P-type — InP Wafer, P-type (Zn-doped), Size: 2", (100) — Type: P-type (Zn); Size: 2"; Orientation: (100) (SKU: DG-InP-020002)
2E
ITO / Glass
Specifications Summary of ITO / Glass
| Type | ITO-coated glass ; FTO glass ; Quartz / Soda-lime |
|---|---|
| Sheet resistance (Ω/sq) | 7 ; 10 ; 15 ; 100 |
| Size | 25×25 ; 50×50 ; 100×100 mm ; on request |
| Glass thickness (mm) | 0.7 ; 1.1 |
| Applications | OLED, touch panel, solar cells, optoelectronics |
Best selling (3)
- ITO Glass 10 Ω/sq — ITO Glass, Sheet resistance 10 Ω/sq, 25×25 mm, thickness 1.1 mm — Sheet resistance: 10 Ω/sq; Size: 25×25 mm; Thickness: 1.1 mm (SKU: DG-ITO-250001)
- ITO Glass 7 Ω/sq — ITO Glass, 7 Ω/sq, 50×50 mm — for OLED / touch panel — Sheet resistance: 7 Ω/sq; Size: 50×50 mm (SKU: DG-ITO-500001)
- FTO Glass 15 Ω/sq — FTO Glass, 15 Ω/sq — for solar cells — Type: FTO; Sheet resistance: 15 Ω/sq; Application: Solar cells (SKU: DG-FTO-150001)